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FDMA1430JP - Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A

FDMA1430JP_8984861.PDF Datasheet


 Full text search : Max rDS(on) = 90 at VGS = -4.5 V, ID = -2.9 A


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N-Channel MOSFETs (>500V…900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
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List of Unclassifed Manufacturers
IRF7476PBF HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mΩ@VGS = 4.5V , ID = 15A )
HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mヘ@VGS = 4.5V , ID = 15A )
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2SK3109 Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)
TY Semiconductor Co., Ltd
2SK3434 Super low on-state resistance: RDS(on)1 = 20m MAX. (VGS= 10 V, ID = 24A)
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2SK2111 N-Channel MOSFET
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
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JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
INTERSIL[Intersil Corporation]
SI9410DY VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V)
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KO3404 VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V)
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KDB5690 32 A, 60 V. RDS(ON) = 0.027 VGS = 10 V RDS(ON) = 0.032 VGS = 6 V
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AP1623SLA AP1623 AP1623S AP1623SA AP1623SL Diodes, Zener; Zener Voltage Typ, Vz:12V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:41-MiniDIP; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:10mA; Gate-Source Cutoff Voltage Max, Vgs(off):-2.5V
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